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Volumn , Issue , 2009, Pages

Short circuit III in high power IGBTs

Author keywords

Free wheel diode (FWD); IGBT; Reverse recovery; Robustness; Traction application

Indexed keywords

FREE WHEEL DIODE (FWD); FREEWHEELING DIODES; HIGH VOLTAGE; HIGH-POWER; PEAK CURRENTS; RECOVERY VOLTAGE; REVERSE RECOVERY; ROBUSTNESS; SHORT CIRCUIT; TRACTION APPLICATIONS; VERY LOW VOLTAGE;

EID: 72949085778     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (52)

References (13)
  • 1
    • 0041438294 scopus 로고    scopus 로고
    • Short Circuit Properties of Trench/Field Stop IGBTs Design Aspects for a Superior Robustness
    • Cambridge
    • Laska T et al: Short Circuit Properties of Trench/Field Stop IGBTs Design Aspects for a Superior Robustness, Proc. 15th ISPSD, pp152, Cambridge (2003)
    • (2003) Proc. 15th ISPSD , pp. 152
    • Laska, T.1
  • 4
    • 72949095743 scopus 로고
    • Optimization of the Short-Circuit Behaviour of NPT-IGBT by the Gate Drive
    • Sevilla, S
    • ECKEL, H.-G.; SACK, L.: "Optimization of the Short-Circuit Behaviour of NPT-IGBT by the Gate Drive", In: EPE 1995. Sevilla, 1995, S. 213-218
    • (1995) EPE , pp. 213-218
    • ECKEL, H.-G.1    SACK, L.2
  • 5
    • 0029270841 scopus 로고
    • Aniceto G.C.: Short Circuit Behavior of IGBT's Correlated to the Intrinsic Device Structure and on the Application Circuit
    • March/April
    • Letor, Romeo R.; Aniceto G.C.: Short Circuit Behavior of IGBT's Correlated to the Intrinsic Device Structure and on the Application Circuit, IEEE Transactions on Industry Applications, Vol. 31, No. 2, March/April 1995
    • (1995) IEEE Transactions on Industry Applications , vol.31 , Issue.2
    • Letor, R.R.1
  • 7
    • 0032141248 scopus 로고    scopus 로고
    • Zero Voltage Switching Behavior of Punchthrough and Nonpunchthrough Insulated Gate Bipolar Transistors (IGBT's)
    • August Pages
    • S. Pendharkar, K. Shenai: Zero Voltage Switching Behavior of Punchthrough and Nonpunchthrough Insulated Gate Bipolar Transistors (IGBT's), IEEE Transactions on Electron Devices, Volume 45, Issue 8, August 1998 Page(s):1826-1835
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.8 , pp. 1826-1835
    • Pendharkar, S.1    Shenai, K.2
  • 8
    • 72949105437 scopus 로고    scopus 로고
    • Passive Turn-On Process of IGBTs in Matrix Converter Applications
    • Barcelona
    • Roman Baburske, Daniel Domes, Josef Lutz, Winfried Hofmann: Passive Turn-On Process of IGBTs in Matrix Converter Applications, Proceedings EPE 2009, Barcelona
    • (2009) Proceedings EPE
    • Baburske, R.1    Domes, D.2    Josef Lutz, W.H.3
  • 10
    • 27744467818 scopus 로고    scopus 로고
    • Influence of Buffer Structures on Static and Dynamic Ruggedness of High Voltage FWDs
    • Santa Barbara
    • B. Heinze, H.P. Felsl, A. Mauder, H.-J. Schulze, J. Lutz: Influence of Buffer Structures on Static and Dynamic Ruggedness of High Voltage FWDs, Proceedings of the ISPSD, Santa Barbara (2005)
    • (2005) Proceedings of the ISPSD
    • Heinze, B.1    Felsl, H.P.2    Mauder, A.3    Schulze, H.-J.4    Lutz, J.5
  • 12
    • 44149109410 scopus 로고    scopus 로고
    • Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations
    • B. Heinze, J. Lutz, H.P. Felsl, H.-J. Schulze: "Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations" Microelectronics Journal, Volume 39, Issue 6, Pages 868-877 (2008)
    • (2008) Microelectronics Journal , vol.39 , Issue.6 , pp. 868-877
    • Heinze, B.1    Lutz, J.2    Felsl, H.P.3    Schulze, H.-J.4
  • 13
    • 77949953049 scopus 로고    scopus 로고
    • +-diodes, Proceedings ISPSD Barcelona pp 41-44 (2009)
    • +-diodes", Proceedings ISPSD Barcelona pp 41-44 (2009)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.