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Volumn , Issue , 2009, Pages

Passive turn-on process of IGBTs in matrix converter applications

Author keywords

Charge carrier plasma; Forward recovery; IGBT; Matrix converter

Indexed keywords

FORWARD-RECOVERY; GATE RESISTANCE; MATRIX CONVERTER; NUMERICAL DEVICE SIMULATION; TURN ON VOLTAGE; TURN-ON PROCESS;

EID: 72949105437     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (14)

References (9)
  • 4
    • 33947637620 scopus 로고    scopus 로고
    • A first loss evalutaion using a vertical sic-jfet and a conventional si-igbt in bidirectional matrix converter switch topology
    • Dresden, Germany
    • D. Domes, W. Hofmann, and J. Lutz, "A first loss evalutaion using a vertical sic-jfet and a conventional si-igbt in bidirectional matrix converter switch topology," in Proc. EPE Conf., Dresden, Germany, 2005.
    • (2005) Proc. EPE Conf
    • Domes, D.1    Hofmann, W.2    Lutz, J.3
  • 5
    • 48349141512 scopus 로고    scopus 로고
    • Sic jfet in contrast to high speed si igbt in matrix converter topology
    • D. Domes and W. Hofmann, "Sic jfet in contrast to high speed si igbt in matrix converter topology," in Proc. PESC, 2007.
    • (2007) Proc. PESC
    • Domes, D.1    Hofmann, W.2
  • 7
    • 72949104072 scopus 로고    scopus 로고
    • Mountain View, CA, Online, Available
    • (2007) Advanced tcad manual. Synopsys Inc. Mountain View, CA. [Online]. Available: http://www.synopsys.com
    • Advanced tcad manual. Synopsys Inc
  • 8
    • 0024105667 scopus 로고
    • A physically based mobility model for numerical simulation of nonplanar devices
    • C. Lombardi, S.Manzini, A. Saporito, and M. Vanzi, "A physically based mobility model for numerical simulation of nonplanar devices," IEEE Trans. Electron Devices, vol. 7, no. 11, pp. 1164-1170, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.7 , Issue.11 , pp. 1164-1170
    • Lombardi, C.1    Manzini, S.2    Saporito, A.3    Vanzi, M.4
  • 9
    • 84936896634 scopus 로고
    • Reverse recovery process in silicon power rectifiers
    • Aug
    • H. J. Benda and E. Spenke, "Reverse recovery process in silicon power rectifiers," Proc. IEEE, vol. 55, no. 8, pp. 1331-1354, Aug. 1967.
    • (1967) Proc. IEEE , vol.55 , Issue.8 , pp. 1331-1354
    • Benda, H.J.1    Spenke, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.