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Volumn , Issue , 2009, Pages 41-44

On the formation of stationary destructive cathode-side filaments in p +-n--n+ diodes

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL RESULTS; CURRENT CROWDING; CURRENT FILAMENTS; DEPLETION LAYER; FRONT DYNAMICS; FRONT VELOCITY; NUMERICAL SIMULATION; PROPAGATION DIRECTION;

EID: 77949953049     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5157996     Document Type: Conference Paper
Times cited : (35)

References (11)
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  • 2
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    • Fast recovery diodes - reverse recovery behaviour and dynamic avalanche
    • Nis, Serbia, May
    • J. Lutz, "Fast recovery diodes - reverse recovery behaviour and dynamic avalanche," in Proc. 24th Int. Conf. Microelectron., Nis, Serbia, May 2004, pp. 11-16.
    • (2004) Proc. 24th Int. Conf. Microelectron , pp. 11-16
    • Lutz, J.1
  • 3
    • 3242791629 scopus 로고    scopus 로고
    • Current-density patterns induced by avalanche injection phenomena in high voltage diodes during turn-off
    • F. J. Niedernostheide, F. Falck, H.-J. Schulze, and U. Kellner-Werdehausen, "Current-density patterns induced by avalanche injection phenomena in high voltage diodes during turn-off," Ann. Phys. (Leipzig), vol. 13, no. 7-8, pp. 414-422, 2004.
    • (2004) Ann. Phys. (Leipzig) , vol.13 , Issue.7-8 , pp. 414-422
    • Niedernostheide, F.J.1    Falck, F.2    Schulze, H.-J.3    Kellner-Werdehausen, U.4
  • 4
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    • On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche
    • Feb
    • M. Domeij, J. Lutz, and D. Silber, "On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 486-493, Feb. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.2 , pp. 486-493
    • Domeij, M.1    Lutz, J.2    Silber, D.3
  • 6
    • 72949104072 scopus 로고    scopus 로고
    • Mountain View, CA, Online, Available
    • (2007) Advanced tcad manual. Synopsys Inc. Mountain View, CA. [Online]. Available: http://www.synopsys.com
    • Advanced tcad manual. Synopsys Inc
  • 8
    • 0033640299 scopus 로고    scopus 로고
    • Current filamentation in bipolar power devices during dynamic avalanche breakdown
    • J. Oetjen, R. Jungblut, U. Kuhlmann, J. Arkenau, and R. Sittig, "Current filamentation in bipolar power devices during dynamic avalanche breakdown," Solid-State Electronics, vol. 44, no. 1, pp. 117-123, 2000.
    • (2000) Solid-State Electronics , vol.44 , Issue.1 , pp. 117-123
    • Oetjen, J.1    Jungblut, R.2    Kuhlmann, U.3    Arkenau, J.4    Sittig, R.5
  • 9
    • 44249098279 scopus 로고    scopus 로고
    • Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities
    • S. Milady, D. Silber, F.-J. Niedernostheide, and H. P. Felsl, "Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities," Microelectronics Journal, vol. 39, no. 6, pp. 857-867, 2008.
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  • 10
    • 34247511680 scopus 로고    scopus 로고
    • A novel diode structure with controlled injection of backside holes (CIBH)
    • Naples, June
    • M. Chen, J. Lutz, M. Domeij, H. P. Felsl, and H. J. Schulze, "A novel diode structure with controlled injection of backside holes (CIBH)," in Proc. ISPSD, Naples, June 2006, pp. 9-12.
    • (2006) Proc. ISPSD , pp. 9-12
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    • H. P. Felsl, M. Pfaffenlehner, H. Schulze, J. Biermann, T. Gutt, H. J. Schulze, M. Chen, and J. Lutz, "The CIBH diode - great improvement for ruggedness and softness of high voltage diodes," in Proc. ISPSD, Orlando, Florida, May 2008, pp. 173-176.
    • (2008) Proc. ISPSD , pp. 173-176
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.