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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages

Thermal stability of GeSbTe thin films deposited by layer-by-layer metalorganic chemical vapor deposition

(4) Ahn, Jun Ku a Park, Kyoung Woo a Seong, Nak Jin a Yoon, Soon Gil a

a Chungnam National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ANNEALING TEMPERATURES; AS-GROWN; AS-GROWN FILMS; GESBTE THIN FILM; INHOMOGENEOUS DISTRIBUTION; LAYER-BY-LAYERS; MELTING TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN AMBIENT; THERMAL STABILITY; THERMALLY UNSTABLE;

ANNEALING; ANTIMONY ALLOYS; ASPECT RATIO; CHEMICAL STABILITY; DEPOSITION; GERMANIUM; MELTING POINT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMODYNAMIC STABILITY;

SYSTEM THEORY;

EID: 72849118504 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3253472 Document Type: Conference Paper

Times cited : (5)

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