Simulation of interfacial phonon transport in Si-Ge heterostructures using an atomistic green's function method

Journal of Heat Transfer

Volumn 129, Issue 4, 2007, Pages 483-491

  Zhang, W ^a   Fisher, T S ^a   Mingo, N ^b  

^a PURDUE UNIVERSITY   (United States)

^b NASA Ames Center for Nanotechnology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC GREEN'S FUNCTION METHOD; PHONON TRANSPORT;

HEAT RESISTANCE; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THERMAL CONDUCTIVITY; THIN FILMS; TRANSPORT PROPERTIES;

PHONONS;

HEAT RESISTANCE; HETEROJUNCTIONS; INTERFACES (MATERIALS); PHONONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THERMAL CONDUCTIVITY; THIN FILMS; TRANSPORT PROPERTIES;

EID: 34547112858     PISSN: 00221481     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.2709656     Document Type: Article

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