Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2 O5 gate dielectric with Au source/drain electrodes

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Takebayashi, Satoko ^a   Abe, Shigeomi ^a   Saiki, Koichiro ^b   Ueno, Keiji ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRODES; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HOLE MOBILITY; MESFET DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; TANTALUM;

AMBIPOLAR; BEFORE AND AFTER; DEVICE CHARACTERISTICS; INJECTION BARRIERS; NA+ IONS; OPERATION CHARACTERISTICS; P TYPES; PENTACENE; PENTACENE FETS; POLYVINYLALCOHOL; SOURCE/DRAIN ELECTRODES;

FIELD EFFECT TRANSISTORS;

EID: 61349094005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089692     Document Type: Article

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