A new F(ast)-CMS algorithm for efficient three-dimensional NEGF simulations of arbitrarily shaped silicon nanowire MUGFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Afzalian, A ^a   Lee, C W ^a   Akhavan, N Dehdashti ^a   Yan, R ^a   Ferain, I ^a   Razavi, P ^a   Colinge, J P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

MOS devices; Quantum effect semiconductor devices; Quantum wires; Semiconductor device modeling; Silicon on insulator technology; Steep subthreshold slope; Tunnel FET

Indexed keywords

QUANTUM EFFECT SEMICONDUCTOR DEVICES; QUANTUM WIRES; SEMICONDUCTOR DEVICE MODELING; SUBTHRESHOLD SLOPE; TUNNEL FET;

ALGORITHMS; GREEN'S FUNCTION; MESFET DEVICES; MOS DEVICES; NANOWIRES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES; SOLENOIDS; THREE DIMENSIONAL; TRANSISTORS; WIND TUNNELS; WIRE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 74349128094     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290205     Document Type: Conference Paper

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