Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 15, 2009, Pages

  Zhang, P ^a   Wu, M W ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 72449188233     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.155311     Document Type: Article

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