4H-SiC planar MESFETs on high-purity semi-insulating substrates

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 763-766

  Yim, Jeong Hyuk ^a   Song, Ho Keun ^a   Moon, Jeong Hyun ^a   Seo, Han Seok ^a   Lee, Jong Ho ^a   Na, Hoon Joo ^a   Lee, Jae Bin ^b   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b R and D Center   (South Korea)

Author keywords

Current instability; High purity semi insulating (HPSI) substrate; MESFET

Indexed keywords

DRAIN CURRENT; INSULATION; MESFET DEVICES; SILICON CARBIDE; TRANSCONDUCTANCE;

4H-SIC SUBSTRATE; CURRENT INSTABILITY; HIGH-PURITY SEMI-INSULATING; MAXIMUM OSCILLATION FREQUENCY; MAXIMUM OUTPUT POWER DENSITIES; MESFET; OUTPUT POWER DENSITY; SATURATION DRAIN CURRENT;

SUBSTRATES;

EID: 38449098783     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.763     Document Type: Conference Paper

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