Reliability of AlGaN/GaN HEMT: Impact of acceleration condition on dominant degradation mechanism

2009 Reliability of Compound Semiconductors Digest - ROCS Workshop

Volumn , Issue , 2009, Pages 7-18

  Rozman, David ^a   Knafo, Yaron ^a   Baksht, Tamara ^a   Aktushev, Oleg ^a   Kolatker, Golan ^a   Moskovitch, Shalom ^a   Bunin, Gregory ^a  

^a Gal El MMIC   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION CONDITION; ALGAN/GAN HEMTS; BASE PLATES; CHANNEL TEMPERATURE; DEGRADATION MECHANISM; DRAIN BIAS; ELECTRON TRAPPING; GATE CURRENT; HIGH-VOLTAGE OPERATION; INVERSE PIEZOELECTRIC EFFECTS; OVERLOAD TESTS; RELIABILITY TESTING;

ELECTRIC FIELDS; ELECTRON TRAPS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; RELIABILITY;

DEGRADATION;

EID: 72449134262     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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