Lineshape analysis of Raman scattering from LO and so phonons in III-V nanowires

Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

  Begum, N ^a   Bhatti, A S ^a   Jabeen, F ^b   Rubini, S ^b   Martelli, F ^b,c  

^a Department of Electrical Computer Engineering   (Pakistan)

^b LABORATORIO TASC   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DISTANCE; CORRELATION LENGTHS; DIELECTRIC CONTINUUM MODEL; GAAS; INAS; LINE SHAPE; LINE-SHAPE ANALYSIS; LO PHONONS; MICRO RAMAN SPECTROSCOPY; PHONON CONFINEMENT; PHONON CONFINEMENT MODEL; SO PHONON; STRUCTURAL DEFECT; SURFACE OPTICAL PHONONS;

CONTINUUM MECHANICS; DEFECT DENSITY; DEFECTS; ELECTRIC WIRE; INDIUM ARSENIDE; MANGANESE; MANGANESE COMPOUNDS; NANOWIRES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SURFACE DEFECTS;

PHONONS;

EID: 72449122827     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3267488     Document Type: Article

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