GaAs nanowires by Mn-catalysed molecular beam epitaxy

Journal of Physics: Conference Series

Volumn 61, Issue 1, 2007, Pages 992-996

  Rubini, S ^a   Piccin, M ^a   Bais, G ^a   Jabeen, F ^a   Martelli, F ^a   Franciosi, A ^a  

^a LABORATORIO TASC   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34247469860     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/61/1/196     Document Type: Article

References (8)

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2. Perea D E, Allen J E, May S J, Wessels B W, Seidman D N and Lauhonm L 2006 J. Nano Lett. 6 181
3. Carlino E, Martelli F, Rubini S and A Franciosi 2006 Phil. Mag. Lett. 86 261
4. Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F and Franciosi A Nano Letters, in press (DOI 10.1021/nl0607838)
5. The surface oxide layer is thermally removed at 580 °C prior to grow any epitaxial layer on GaAs
6. Doniach S and unji M 1970 J. Phys. C: Solid St. Phys. 3 285
7. Finnie C M, Li X and Bohn P W 1999 J. Appl. Phys. 86 4997
8. Hermsmeier B, Fadley C S, Krause M O, Jimenez Mier J, Gerard P and Manson S T 1988 Phys. Rev. Lett. 61 2592