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Physical Review B

Volumn 50, Issue 11, 1994, Pages 8067-8070

Atomic geometry and electronic structure of native defects in GaN

(2) Neugebauer, Jörg a Van De Walle, Chris G a

a PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5644231961 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.50.8067 Document Type: Article

Times cited : (757)

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- Note that this is the value for nitrogen rich conditions. For nitrogen poor conditions the formation enthalpy of GaN (1.1 ,eV) has to be subtracted.

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