메뉴 건너뛰기




Volumn 386, Issue 1-2, 2004, Pages 68-73

The onset of secondary slip in the plastic deformation of tetrahedrally bound semiconductors

Author keywords

Dislocation core processes; Mechanisms of dislocation motion; Onset of secondary slip; Plasticity of semiconductors; Stress strain curve

Indexed keywords

ACTIVATION ENERGY; DEFORMATION; DOPING (ADDITIVES); PHASE TRANSITIONS; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTOR MATERIALS; STRAIN RATE; STRESS ANALYSIS; THERMAL EFFECTS; TRANSITION METALS;

EID: 6344270097     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2004.07.015     Document Type: Article
Times cited : (1)

References (28)
  • 22
  • 28
    • 0003760432 scopus 로고    scopus 로고
    • R. Hull (Ed.) EMIS Datareviews Series No. 20 INSPEC London
    • N. Lehto M.I. Heggie in: R. Hull (Ed.) Properties of Crystalline Silicon, EMIS Datareviews Series No. 20 1999 INSPEC London 357-378
    • (1999) Properties of Crystalline Silicon , pp. 357-378
    • Lehto, N.1    Heggie, M.I.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.