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Volumn 55, Issue 4, 2009, Pages 1591-1595

The structure and the photoluminescence properties of SiO x-passivated Ga 2O 3 nanowires

Author keywords

Ga 2O 3 nanowires; Photoluminescence; SiO x shells; Transmission electron microscopy (TEM)

Indexed keywords


EID: 72149132047     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.55.1591     Document Type: Article
Times cited : (1)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.