Shallow trapping center parameters in as-grown AgIn5S 8 crystals determined by thermally stimulated current measurements

Crystal Research and Technology

Volumn 44, Issue 12, 2009, Pages 1267-1271

  Yildirim, T ^a   Gasanly, N M ^b  

^a NEVSEHIR HACI BEKTAS VELI UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Chalcogenides; Defects; Electrical properties; Semiconductors

Indexed keywords

AS-GROWN; CAPTURE CROSS SECTIONS; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; ELECTRON TRAP LEVELS; METHODS OF ANALYSIS; RETRAPPING; THEORETICAL PREDICTION; THERMALLY STIMULATED CURRENT; TRAPPING CENTERS;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; CHALCOGENIDES; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; THERMOLUMINESCENCE;

SINGLE CRYSTALS;

EID: 72149131218     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200900495     Document Type: Article

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