Thermally stimulated current in high resistivity Cd0.85Mn 0.15 Te doped with indium

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Wrobel, J M ^a   Gubanski A ^b   Placzek Popko E ^b   Rezmer, J ^b   Becla, P ^c  

^a UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; CHARGE TRAPPING; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; RELAXATION PROCESSES; SEMICONDUCTOR DOPING;

INITIAL RISE METHOD; RELAXATION PARAMETERS; THERMALLY STIMULATED CURRENT;

CADMIUM COMPOUNDS;

EID: 41549088348     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2894576     Document Type: Article

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