Fabrication and some physical properties of AgIn5S8 thin films

Materials Science and Engineering: B

Volumn 113, Issue 1, 2004, Pages 73-78

  Qasrawi, A F ^a   Kayed, T S ^a   Ercan, I ^b,c  

^a ATILIM UNIVERSITY   (Turkey)

^b Ankara Nuclear Research and Training Center   (Turkey)

^c ABANT IZZET BAYSAL UNIVERSITY   (Turkey)

Author keywords

AgIn5S8; Conductivity; Photoeurrent; Spectra; Ternary; Thin film; X ray

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; EVAPORATION; FLUORESCENCE; LATTICE CONSTANTS; PHOTOCURRENTS; PHOTONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILVER COMPOUNDS; SINGLE CRYSTALS; STOICHIOMETRY; TERNARY SYSTEMS; X RAY DIFFRACTION ANALYSIS;

AGIN5S8; HALL MOBILITY; THERMIONIC EMISSIONS; X-RY FLUORESCENCE ANALYSIS;

THIN FILMS;

EID: 4344710177     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.002     Document Type: Article

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