-
1
-
-
0345851246
-
-
Yamamoto K., Yoshimi M., Tawada Y., Okamoto Y., and Nakajima A. Thin film Si solar cell fabricated at low temperature, J. Non-Cryst. Solids 266-269 (2000) 1082-1087
-
(2000)
Thin film Si solar cell fabricated at low temperature, J. Non-Cryst. Solids
, vol.266-269
, pp. 1082-1087
-
-
Yamamoto, K.1
Yoshimi, M.2
Tawada, Y.3
Okamoto, Y.4
Nakajima, A.5
-
2
-
-
0038525147
-
-
K. Saito, M. Sano, A. Sakai, R. Hayashi, K. Ogawa, Technical Digest of the 12th International PVSEC, 2001, pp. 429-431.
-
(2001)
Technical Digest of the 12th International PVSEC
, pp. 429-431
-
-
Saito, K.1
Sano, M.2
Sakai, A.3
Hayashi, R.4
Ogawa, K.5
-
3
-
-
0032593264
-
-
Keppner H., Meier J., Torres P., Fischer D., and Shah A. Microcrystalline silicon and micromorph tandem solar cells, Appl. Phys. A: Mater. Sci. Process. 69 (1999) 169-177
-
(1999)
Microcrystalline silicon and micromorph tandem solar cells, Appl. Phys. A: Mater. Sci. Process.
, vol.69
, pp. 169-177
-
-
Keppner, H.1
Meier, J.2
Torres, P.3
Fischer, D.4
Shah, A.5
-
4
-
-
0033879621
-
-
Vetterl O., Finger F., Carius R., Hapke P., Houben L., Kluth O., Lambertz A., Muck A., Rech B., and Wagner H. Instrinsic microcrystalline silicon: a new material for photovoltaics, Sol. Energy Mater. Sol. Cells 62 (2000) 97-108
-
(2000)
Instrinsic microcrystalline silicon: a new material for photovoltaics, Sol. Energy Mater. Sol. Cells
, vol.62
, pp. 97-108
-
-
Vetterl, O.1
Finger, F.2
Carius, R.3
Hapke, P.4
Houben, L.5
Kluth, O.6
Lambertz, A.7
Muck, A.8
Rech, B.9
Wagner, H.10
-
6
-
-
0002252601
-
-
Kondo M., Fukawa M., Guo L., and Matsuda A. High rate growth of microcrystalline silicon at low temperature, J. Non-Cryst. Solids 266-269 (2000) 84-89
-
(2000)
High rate growth of microcrystalline silicon at low temperature, J. Non-Cryst. Solids
, vol.266-269
, pp. 84-89
-
-
Kondo, M.1
Fukawa, M.2
Guo, L.3
Matsuda, A.4
-
7
-
-
5444243125
-
-
Yan B., Yue G., Yang J., and Guha S. Hydrogen dilution profiling for hydrogenated microcrystalline silicon solar cells, Appl. Phys. Lett. 85 (2004) 1955-1957
-
(2004)
Hydrogen dilution profiling for hydrogenated microcrystalline silicon solar cells, Appl. Phys. Lett.
, vol.85
, pp. 1955-1957
-
-
Yan, B.1
Yue, G.2
Yang, J.3
Guha, S.4
-
8
-
-
33748759259
-
-
Gu J., Zhu M., Wang L., Liu F., Zhou B., Ding K., and Li G. High quality microcrystalline Si films by hydrogen dilution profile, Thin Solid Films 515 (2006) 452-455
-
(2006)
High quality microcrystalline Si films by hydrogen dilution profile, Thin Solid Films
, vol.515
, pp. 452-455
-
-
Gu, J.1
Zhu, M.2
Wang, L.3
Liu, F.4
Zhou, B.5
Ding, K.6
Li, G.7
-
9
-
-
72149099897
-
-
Ph.D. Thesis, ISBN 90-393-06532
-
A. Gordijn, Ph.D. Thesis, 2005, ISBN 90-393-06532.
-
(2005)
-
-
Gordijn, A.1
-
10
-
-
34249851231
-
-
Guo Q., Geng X., Sun J., Wei C., Han X., Zhang X., and Zhao Y. Role of gas residence time in the deposition rate and properties of microcrystalline silicon films, Acta Phys. Sin. 56 (2007) 2790-2796
-
(2007)
Role of gas residence time in the deposition rate and properties of microcrystalline silicon films, Acta Phys. Sin.
, vol.56
, pp. 2790-2796
-
-
Guo, Q.1
Geng, X.2
Sun, J.3
Wei, C.4
Han, X.5
Zhang, X.6
Zhao, Y.7
-
11
-
-
51649115829
-
-
Han X., Hou G., Li G., Zhang X., Yuan Y., Zhang D., Chen X., Wei C., Sun J., and Geng X. Influence of low rate p/i interface layer on the performance of high rate growth microcrystalline silicon solar cells, Acta Phys. Sin. 57 (2008) 5284-5289
-
(2008)
Influence of low rate p/i interface layer on the performance of high rate growth microcrystalline silicon solar cells, Acta Phys. Sin.
, vol.57
, pp. 5284-5289
-
-
Han, X.1
Hou, G.2
Li, G.3
Zhang, X.4
Yuan, Y.5
Zhang, D.6
Chen, X.7
Wei, C.8
Sun, J.9
Geng, X.10
-
14
-
-
72149120311
-
-
345 pp
-
L. Feitknecht, J. Meier, P. Torres, J. Zurcher, A. Shah, Technical Digest of the International PVSEC-12, 2001, 345 pp.
-
(2001)
Technical Digest of the International PVSEC-12
-
-
Feitknecht, L.1
Meier, J.2
Torres, P.3
Zurcher, J.4
Shah, A.5
-
15
-
-
0038070079
-
-
Kosku N., Kurisu F., Takegoshi M., Takahashi H., and Miyazaki S. High-rate deposition of highly crystallized silicon films from inductively coupled plasma, Thin Solid Films 435 (2003) 39-43
-
(2003)
High-rate deposition of highly crystallized silicon films from inductively coupled plasma, Thin Solid Films
, vol.435
, pp. 39-43
-
-
Kosku, N.1
Kurisu, F.2
Takegoshi, M.3
Takahashi, H.4
Miyazaki, S.5
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