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1
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0032635714
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High power 600 nm range lasers grown by solid source molecular beam epitaxy
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SPIE
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S. Orsila, M. Toivonen, P. Savolainen, V. Vilokkinen, P. Melanen, M. Pessa, M. Saarinen, P. Uusimaa, P. Corvini, F. Fang, M. Jansen, R. Nabiev, "High power 600 nm range lasers grown by solid source molecular beam epitaxy", SPIE Conference on In-Plane Semiconductor Lasers III, SPIE Vol. 3628, 203-208 (1999)
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(1999)
SPIE Conference on In-Plane Semiconductor Lasers III
, vol.3628
, pp. 203-208
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Orsila, S.1
Toivonen, M.2
Savolainen, P.3
Vilokkinen, V.4
Melanen, P.5
Pessa, M.6
Saarinen, M.7
Uusimaa, P.8
Corvini, P.9
Fang, F.10
Jansen, M.11
Nabiev, R.12
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2
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84885254801
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OSRAM Opto Semiconductors http://catalog.osram-os.com
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Semiconductors
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3
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34548031348
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650 nm InGaP broad area lasers with 5000 h reliable operation at 600 mW
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B. Sumpf, M. Zorn, R. Staske, J. Fricke, A. Ginolas, K. Häusler, W. Pittroff, P. Ressel, G. Erbert, M. Weyers, G. Tränkle "650 nm InGaP broad area lasers with 5000 h reliable operation at 600 mW" IEEE Photonics Technology Letters 19, 118-120 (2007)
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(2007)
IEEE Photonics Technology Letters
, vol.19
, pp. 118-120
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Sumpf, B.1
Zorn, M.2
Staske, R.3
Fricke, J.4
Ginolas, A.5
Häusler, K.6
Pittroff, W.7
Ressel, P.8
Erbert, G.9
Weyers, M.10
Tränkle, G.11
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4
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35348992220
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3 W - broad area lasers and 12 W - bars with conversion efficiencies up to 40% at 650 nm
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B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, A. Ginolas, K. Paschke, G. Erbert, M. Weyers, and G. Tränkle "3 W - broad area lasers and 12 W - bars with conversion efficiencies up to 40% at 650 nm" IEEE Journal of Selected Topics in Quantum Electronics 13, 1188-1193 (2007)
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(2007)
IEEE Journal of Selected Topics in Quantum Electronics
, vol.13
, pp. 1188-1193
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Sumpf, B.1
Zorn, M.2
Staske, R.3
Fricke, J.4
Ressel, P.5
Ginolas, A.6
Paschke, K.7
Erbert, G.8
Weyers, M.9
Tränkle, G.10
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5
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3743076020
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High-power continuous-wave operation of 630 nm-band laser arrays
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J. S. Osinski, B. Lu, H. Zhao, B. Schmidt, "High-power continuous-wave operation of 630 nm-band laser arrays" Electronics Letters 34, 2336-2337 (1998)
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(1998)
Electronics Letters
, vol.34
, pp. 2336-2337
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Osinski, J.S.1
Lu, B.2
Zhao, H.3
Schmidt, B.4
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6
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27644528807
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7 W operation of 644 nm wavelength laser diode arrays with index-guided structure
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D. Imanishi, Y. Sato, K. Naganuma, S. Ito, S. Hirata "7 W operation of 644 nm wavelength laser diode arrays with index-guided structure; Electronics Letters 41, 1172-1173 (2005)
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(2005)
Electronics Letters
, vol.41
, pp. 1172-1173
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Imanishi, D.1
Sato, Y.2
Naganuma, K.3
Ito, S.4
Hirata, S.5
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7
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35349023824
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5 W reliable operation over 2000 h of 5 mm wide 650 nm AlGaInP/GaInP/AlGaAs laser bars with asymmetric cladding layers
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B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle "5 W reliable operation over 2000 h of 5 mm wide 650 nm AlGaInP/GaInP/AlGaAs laser bars with asymmetric cladding layers" IEEE Photonics Technology Letters 18, No. 18, 1955-1957 (2006)
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(2006)
IEEE Photonics Technology Letters
, vol.18
, Issue.18
, pp. 1955-1957
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Sumpf, B.1
Zorn, M.2
Staske, R.3
Fricke, J.4
Ressel, P.5
Erbert, G.6
Weyers, M.7
Tränkle, G.8
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8
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33846420640
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High-power red laser diodes grown by MOVPE
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M. Zorn, H. Wenzel, U. Zeimer, B. Sumpf, G. Erbert, M. Weyers, "High-power red laser diodes grown by MOVPE" Journal of Crystal Growth 298, 667-671 (2006)
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(2006)
Journal of Crystal Growth
, vol.298
, pp. 667-671
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Zorn, M.1
Wenzel, H.2
Zeimer, U.3
Sumpf, B.4
Erbert, G.5
Weyers, M.6
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9
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33750684135
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High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%" "Novel In-Plane Semiconductor Lasers V
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edited by Carmen Mermelstein and David P. Bour;
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B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle, "High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%" "Novel In-Plane Semiconductor Lasers V" edited by Carmen Mermelstein and David P. Bour; Proceedings SPIE Vol. 6133, p. 78-85 (2006)
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(2006)
Proceedings SPIE
, vol.6133
, pp. 78-85
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Sumpf, B.1
Zorn, M.2
Staske, R.3
Fricke, J.4
Ressel, P.5
Erbert, G.6
Weyers, M.7
Tränkle, G.8
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10
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18944377635
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Novel Passivation Process for the Mirror Facets of High-Power Semiconductor Diode Lasers
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P. Ressel, G. Erbert, U. Zeimer, K. Häusler, G. Beister, B. Sumpf, A. Klehr, G. Tränkle, .,Novel Passivation Process for the Mirror Facets of High-Power Semiconductor Diode Lasers", IEEE Photonics Technology Letters 17, 962-964 (2005)
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(2005)
IEEE Photonics Technology Letters
, vol.17
, pp. 962-964
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Ressel, P.1
Erbert, G.2
Zeimer, U.3
Häusler, K.4
Beister, G.5
Sumpf, B.6
Klehr, A.7
Tränkle, G.8
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