Charge transfer and trapping properties in polymer gate dielectrics for non-volatile organic field-effect transistor memory applications

Solid-State Electronics

Volumn 53, Issue 11, 2009, Pages 1165-1168

  Baeg, Kang Jun ^a,b   Noh, Yong Young ^b   Kim, Dong Yu ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Conjugated molecules; Organic field effect transistors; Organic non volatile memory; Polymer electret

Indexed keywords

CHARGE STORAGE; CONJUGATED MOLECULES; EFFICIENT ELECTRON INJECTION; FLUOROPOLYMER; GATE BIAS; MEMORY APPLICATIONS; MEMORY DEVICE; MEMORY WINDOW; NEGATIVE V; NON-VOLATILE; NON-VOLATILE MEMORIES; ORGANIC FIELD-EFFECT TRANSISTORS; ORGANIC NON-VOLATILE MEMORY; PENTACENE FET; PENTACENES; POLYMER DIELECTRICS; POLYMER GATE DIELECTRICS; RETENTION TIME; TRAPPING CHARACTERISTIC; TRAPPING PROPERTIES; VIA HOLE;

BIOLOGICAL MATERIALS; CHARGE TRANSFER; CHARGE TRAPPING; COMPUTER PROGRAMMING; DIELECTRIC DEVICES; DIELECTRIC PROPERTIES; ELECTRETS; ELECTRON INJECTION; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); ION EXCHANGE; MASS TRANSFER; MESFET DEVICES; NAPHTHALENE; ORGANIC POLYMERS; PHOTORESISTS; POLYETHERIMIDES; POLYMERS; POLYSTYRENES; SEMICONDUCTING ORGANIC COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 72149100481     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.07.003     Document Type: Article

References (20)

1. Forrest S.R. Nature 428 (2004) 911-918
2. Goronkin H., and Yang Y. MRS Bull 29 (2004) 805-813
3. Ma L., Pyo S., Ouyang J., Xu Q., and Yang Y. Appl Phys Lett 82 (2003) 1419-1421
4. Möller S., Perlov C., Jackson W., Taussig C., and Forrest S.R. Nature 426 (2003) 166-169
5. Möller S., Forrest S.R., Perlov C., Jackson W., and Taussig C. J Appl Phys 94 (2003) 7811-7819
6. Green J.E., Choi J.W., Boukai A., Bunimovich Y., Johnston-Halperin E., Delonno E., et al. Nature 445 (2007) 414-417
7. Schroeder R., Majewski L.A., and Grell M. Adv Mater 16 (2004) 633-636
8. Naber R.C.G., Tanase C., Blom P.W.M., Gelinck G.H., Marsman A.W., Touwslager F.J., et al. Nat Mater 4 (2005) 243-248
9. Katz H.E., Hong X.M., Dodabalapur A., and Sarpeshkar R. J Appl Phys 91 (2002) 1572-1576
10. Baeg K.J., Noh Y.Y., Ghim J., Kang S.J., Lee H., and Kim D.Y. Adv Mater 18 (2006) 3179-3183
11. Gelinck G. Nature 445 (2007) 268-270
12. Singh T.B., Marjanović N., Matt G.J., Sariciftci N.S., Schwödiauer R., and Bauer S. Appl Phys Lett 85 (2004) 5409-5411
13. Auciello O., Scott J.F., and Ramesh R. Phys Today 51 (1998) 22-27
14. Emerging Research Devices, International Technology Roadmap for Semiconductors (ITRS); 2005 .
15. Sze S.M. Physics of semiconductor devices. 2nd ed (1981), Wiley, New York
16. Ling M.M., and Bao Z. Chem Mater 16 (2004) 4824-4840
17. Baeg K.J., Noh Y.Y., Ghim J., Lim B., and Kim D.Y. Adv Funct Mater 18 (2008) 3678-3685
18. Sessler G.M., and Gerhard-Multhaupt R. Electrets vol. 1 (1999), Laplacian Press, Morgan-Hill
19. Watson P.K. IEEE Trans Dielectr Electr Insul 2 (1995) 915-924
20. Sessler G.M. J Electrost 51 (2001) 137-145