Optical properties of homo- and heteroepitaxial ZnO / Mgx Zn1 - x O single quantum wells grown by pulsed-laser deposition

Journal of Luminescence

Volumn 130, Issue 3, 2010, Pages 520-526

  Zippel, J ^a   Heitsch, S ^a   Stolzel M ^a   Muller A ^a   von Wenckstern, H ^a   Benndorf, G ^a   Lorenz, M ^a   Hochmuth, H ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Linewidth; Quantum well; ZnO

Indexed keywords

ALLOY DISORDER; BLUE SHIFT; EXCITON TRANSITION ENERGY; FULL WIDTH OF HALF MAXIMUM; HETEROEPITAXIAL; HOMOEPITAXIAL; MONOEXPONENTIAL DECAY; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM WELL; SAPPHIRE SUBSTRATES; SINGLE QUANTUM WELL; TIME-RESOLVED PHOTOLUMINESCENCE; TRANSITION ENERGY; WELL WIDTH; ZNO; ZNO SUBSTRATE;

CORUNDUM; EXCITONS; LIGHT EMISSION; LINEWIDTH; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 72149092941     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2009.10.025     Document Type: Article

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