Temperature dependent photoluminescence from ZnO/MgZnO multiple quantum wells grown by pulsed laser deposition

Superlattices and Microstructures

Volumn 42, Issue 1-6, 2007, Pages 212-217

  Misra, P ^a   Sharma, T K ^a   Kukreja, L M ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

II VI oxide semiconductors; Multiple quantum wells; Photoluminescence; ZnO

Indexed keywords

MAGNESIUM COMPOUNDS; OXIDE SUPERCONDUCTORS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS; THICKNESS MEASUREMENT;

EMPIRICAL RELATION; LAYER THICKNESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34548495833     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.04.039     Document Type: Article

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