Electrical performance in iron-passivated porous silicon film

Journal of Alloys and Compounds

Volumn 485, Issue 1-2, 2009, Pages 422-426

  Rahmani, M ^a   Moadhen, A ^a   Zaibi M A ^a,b   Lusson, A ^c   Elhouichet, H ^a   Oueslati, M ^a  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b UNIVERSITY OF TUNIS   (Tunisia)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

I V measurments; Iron; Passivation; Porous silicon; Schottky diode; Space charge limited conduction

Indexed keywords

ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; ENERGY DISPERSIVE X RAY ANALYSIS; ENERGY GAP; IRON; IRON COMPOUNDS; OPTICAL PROPERTIES; PASSIVATION; SCHOTTKY BARRIER DIODES; SOLUTIONS; THRESHOLD VOLTAGE;

ELECTRICAL PERFORMANCE; IMPREGNATION METHODS; MEASURMENTS; POROUS SILICON FILMS; SCHOTTKY DIODES; SERIES RESISTANCES; SPACE CHARGE LIMITED CONDUCTION; TRANSPORT MECHANISM;

POROUS SILICON;

EID: 72049086666     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.05.127     Document Type: Article

References (33)

1. Canham L.T. Appl. Phys. Lett. 57 (1990) 1046
2. Lugo J.E., del Rio J.A., and Tagiňa-Martinez J. Sol. Energy Mater. Solar Cell 52 (1998) 239
3. Bisi O., Ossicini S., and Pavesi L. Surf. Sci. Rep. 38 (2000) 1
4. Pap A.E., Kordas K., Vahakangas J., Uusimaki A., Leppavuori S., Pilon L., and Szatmari S. Opt. Mater. 28 (2006) 506
5. Chen S., Huang Y., and Cai B. Solid-State Electron. 49 (2005) 940
6. Myong S.Y., Kim S.S., and Lim K.S. Appl. Phys. Lett. 84 (2004) 5416
7. Ma T., Xu J., Du J., Li W., Huang X., and Chen K. J. Appl. Phys. 88 (2000) 6408
8. Chang S.-S., and Sakai A. Mater. Lett. 58 (2004) 1212
9. Fernandes M., Vieira M., Rodrigues I., and Martins R. Sens. Actuators A 113 (2004) 360
10. Bourenane K., Keffous A., and Nezzal G. Vacuum 81 (2007) 663
11. Badawy W.A. J. Alloys Compd. 464 (2008) 347
12. Macedo G.A., de Vasconcelos E.A., Valaski R., Muchenski F., da Silva Jr. E.F., da Silva A.F., and Roman L.S. Thin Sol. Films 517 (2008) 870
13. Peng C., Hirschman K.D., and Fauchet P.M. J. Appl. Phys. 80 (1996) 295
14. Lee W.H., Lee C., and Jang J. J. Non-Cryst. Solids 198-200 (1996) 911
15. Kayahan E., Ceylan N., and Esmer K. Appl. Surf. Sci. 255 (2008) 2808
16. Vinod P.N. J. Alloys Compd. 470 (2009) 393
17. Zhu D., Chen Q., and Zhang Y. Appl. Surf. Sci. 19 1-4 (2002) 218
18. Rahmani M., Moadhen A., Zaïbi M.-A., Elhouichet H., and Oueslati M. J. Lumin. 128 (2008) 1763
19. Chen Q.W., Li X., and Zhang Y. Chem. Phys. Lett. 343 (2001) 507
20. Namavar F., Maruska H.P., and Kalkhoran N.M. Appl. Phys. Lett. 60 (1992) 2514
21. Das B., and McGinnis S.P. Semicond. Sci. Technol. 14 (1999) 988
22. Rhoderick E.H. Metal-Semiconductor Contacts (1988), Oxford University Press, Oxford
23. Martin-Palma R.J., Pérez-Rigueiro J., and Martinez-Duart J.M. J. Appl. Phys. 86 (1999) 6911
24. Ben-Chorin M., Möller F., and Koch F. Phys. Rev. B 49 (1994) 2981
25. Lampert M.A., and Mark P. Current Injection in Solids (1970), Academic Press, New York, London
26. Balagurov L.A., Yarkin D.G., and Petrova E.A. Mater. Sci. Eng. B 69-70 (2000) 127
27. Doǧan S., and Tüzemen S. J. Lumin. 128 (2008) 23
28. M. Rahmani, H. Ajlani, A. Moadhen, M.-A. Zaïbi, H. Elhouichet, M. Oueslati, J. Lumin. submitted for publication.
29. Dimova-Malinovska D., and Nikolavea M. Vacuum 69 (2002) 227
30. Elhouichet H., Moadhen A., Oueslati M., Romdhane S., Roger J.A., and Bouchriha H. Phys. Stat. Sol. C 2 (2005) 3349
31. Lide D.R. Handbook of Chemistry and Physics. vol. 84 (2003-2004), CRC Press, Boca Ratom, London, New York, Washington, DC
32. van Buuren T., Tiedje T., Dahn J.R., and Way B.M. Appl. Phys. Lett. 63 (1993) 2911
33. Matsuura H., Okuno T., Okushi H., and Tanaka K. J. Appl. Phys. 55 (1984) 1012