Making Mn substitutional impurities in InAs using a scanning tunneling microscope

Nano Letters

Volumn 9, Issue 12, 2009, Pages 4333-4337

  Song, Young Jae ^a,b   Erwin, Steven C ^c   Rutter, Gregory M ^a   First, Phillip N ^d   Zhitenev, Nikolai B ^a   Stroscio, Joseph A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM EXCHANGE; HIGH RESOLUTION SCANNING TUNNELING MICROSCOPY; INAS; MANIPULATION TECHNIQUES; REACTION PATHWAYS; SCANNING TUNNELING MICROSCOPES; SUBSTITUTIONAL IMPURITIES;

ADATOMS; ATOMS; ELECTRON TUNNELING; IMPURITIES; INDIUM ARSENIDE; MANGANESE COMPOUNDS; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM; SUBSTITUTION REACTIONS; WIND TUNNELS;

MANGANESE;

INDIUM; INDIUM ARSENIDE; MANGANESE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; MICROMANIPULATION; NANOTECHNOLOGY; PARTICLE SIZE; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; INDIUM; MACROMOLECULAR SUBSTANCES; MANGANESE; MATERIALS TESTING; MICROMANIPULATION; MICROSCOPY, SCANNING TUNNELING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 71949126081     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl902575g     Document Type: Article

References (24)

1. Eigler, D. M.; Schweizer, E. K. Nature 1990, 344, 524-526.
2. Stroscio, J. A.; Eigler, D. M. Science 1991, 254, 1319-1326.
3. Stroscio, J. A.; Celotta, R. J. Science 2004, 306, 242-247.
4. Bartels, L.; Meyer, G.; Rieder, K.-H. Phys. Rev. Lett. 1997, 79, 697.
5. Crommie, M. F.; Lutz, C. P.; Eigler, D. M. Science 1993, 262, 218-220.
6. Manoharan, H. C.; Lutz, C. P.; Eigler, D. M. Nature 2000, 403, 512-515.
7. Heinrich, A. J.; Lutz, C. P.; Gupta, J. A.; Eigler, D. M. Science 2002, 298, 1381-1387.
8. Hirjibehedin, C. F.; Lutz, C. P.; Heinrich, A. J. Science 2006, 312, 1021-1024.
9. Kitchen, D.; Richardella, A.; Tang, J. M.; Flatte, M. E.; Yazdani, A. Nature 2006, 442, 436-439.
10. Richardella, A.; Kitchen, D.; Yazdani, A. Phys. Rev. B 2009, 80, 045318.
11. Garleff, J. K.; Celebi, C.; Van Roy, W.; Tang, J. M.; Flatte, M. E.; Koenraad, P. M. Phys. Rev. B 2008, 78.
12. Getzlaff, M.; Morgenstern, M.; Meyer, C.; Brochier, R.; Johnson, R. L.; Wiesendanger, R. Phys. Rev. B 2001, 63.
13. Monch, W. Semiconductor Surfaces and Interfaces; Springer-Verlag: Berlin, 2001.
14. Kresse, G.; Hafner, J. Phys. Rev. B 1993, 47, 558.
15. Kresse, G.; Furthmüller, J. Phys. Rev. B 1996, 11169.
16. Disclamer. The full description of the procedures used in this paper requires the identification of certain commercial products and their suppliers. The inclusion of such information should in no way be construed as indicating that such products or suppliers are endorsed by NIST or are recommended by NIST or that they are necessarily the best materials, instruments, software, or suppliers for the purposes described.
17. Tersoff, J.; Hamann, D. R. Phys. Rev. B 1985, 31, 805.
18. Fu, H. X.; Ye, L.; Zhang, K. M.; Xide, X. Surf. Sci. 1995, 341, 273-281.
19. Shen, T. C.; Wang, C.; Abeln, G. C.; Tucker, J. R.; Lyding, J. W.; Avouris, P.; Walkup, R. E. Science 1995, 268, 1590-1592.
20. Gao, S. W.; Persson, M.; Lundqvist, B. I. Phys. Rev. B 1997, 55, 4825-4836.
21. Ueba, H. Surf. Rev. Lett. 2003, 10, 771-796.
22. Stroscio, J. A.; Tavazza, F.; Crain, J. N.; Celotta, R. J.; Chaka, A. M. Science 2006, 313, 948-951.
23. Lastapis, M.; Martin, M.; Riedel, D.; Hellner, L.; Comtet, G.; Dujardin, G. Science 2005, 308, 1000-1003.
24. Muller, W.; Tsong, T. T. Field Ion Microscopy, Principles and Applications; Elsevier: New York, 1969.