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Volumn 306, Issue 5694, 2004, Pages 242-247

Controlling the dynamics of a single atom in lateral atom manipulation

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON SCATTERING; SCANNING TUNNELING MICROSCOPY; TEMPERATURE;

EID: 5044224428     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1102370     Document Type: Article
Times cited : (260)

References (30)
  • 8
    • 0001446932 scopus 로고
    • T. C. Shen et al., Science 268, 1590 (1995).
    • (1995) Science , vol.268 , pp. 1590
    • Shen, T.C.1
  • 14
    • 5044220467 scopus 로고    scopus 로고
    • note
    • This system was realized experimentally as follows: A Cu(111) sample was cleaned by repeated cycles of Ne sputtering and annealing to 600°C while reflection high-energy electron diffraction was used to monitor sample quality. We then transferred the substrate, along with an Ir probe tip prepared using a field ion microscope, to a low-temperature STM. Co adatoms were then deposited onto the Cu(111) substrate at 7 K. All preparation, transfers, and measurements took place in an ultrahigh-vacuum system containing a low-temperature STM of our design that operates over a temperature range of 2.3 to 43 K.
  • 17
    • 2142803437 scopus 로고    scopus 로고
    • Video clips and additional data are available on Science Online.
    • Science Online
  • 18
    • 5044220694 scopus 로고    scopus 로고
    • note
    • Although we know of no mention in the published literature, we believe D. M. Eigler was the first to use the tunnel current for audio feedback during atom manipulation.
  • 19
    • 5044219604 scopus 로고    scopus 로고
    • note
    • We measured the time dependence of / at the hcp site as a function of Vat fixed Z, and as a function of Z at fixed V, during atom manipulation. These two measurements are interrelated through the tunnel junction relation (and elucidate different aspects of the switching dynamics), where, at low voltages, / = V/R. at fixed Z, and / = A exp(-2κZ), for fixed V; here, κ is the tunneling barrier decay constant. See (29).
  • 22
    • 5044230615 scopus 로고    scopus 로고
    • note
    • Errors reported in this article represent two standard deviations of the statistical uncertainty in the measurement
  • 27
    • 5044219829 scopus 로고    scopus 로고
    • note
    • We take the effective distance to be half the fcc-hcp distance for a constant barrier approximation that would yield the same WKB barrier integral.
  • 30
    • 5044227318 scopus 로고    scopus 로고
    • note
    • We thank A. Fein and S. Blankenship for their assistance, and W. Gadzuk, M. Stiles, and N. Zimmerman for very fruitful discussions. Supported in part by the Office of Naval Research.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.