In situ observation of secondary phase formation in Fe implanted GaN annealed in low pressure N2 atmosphere

Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

  Talut, G ^a   Grenzer, J ^a   Reuther, H ^a   Shalimov, A ^a   Baehtz, C ^a   Novikov, D ^b   Walz, B ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b DESY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CYCLES; CONCENTRATION OF; HIGH TEMPERATURE; IN-SITU; IN-SITU OBSERVATIONS; LATTICE SITES; LOW PRESSURES; MAGNETIZATION MEASUREMENTS; PHASE CHANGE; PHASE TRANSFORMATION; PROCESS GAS; RESIDUAL OXYGEN; ROOM TEMPERATURE; SAMPLE SURFACE; SECONDARY PHASE; SECONDARY PHASIS;

ANNEALING; GALLIUM NITRIDE; OXYGEN; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 71949124272     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3271828     Document Type: Article

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