The origin of hole injection improvements with MoO3/Al bilayer electrodes in pentacene thin-film transistors

Synthetic Metals

Volumn 159, Issue 23-24, 2009, Pages 2502-2505

  Jeon, Pyungeun ^a   Han, Kyul ^a   Lee, Hyunbok ^a   Kim, Hyun Sung ^a   Jeong, Kwangho ^a   Cho, Kwanghee ^b   Cho, Sang Wan ^c   Yi, Yeonjin ^d,e  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Boston University   (United States)

^d Korea Research Institute of Standards and Science   (South Korea)

^e University of Science and Technology (UST)   (South Korea)

Author keywords

Al; Electronic structure; Injection barrier; MoO3; Pentacene; UPS; XPS

Indexed keywords

BI-LAYER; CORE LEVELS; ELECTRONIC DEVICE PERFORMANCE; ENERGY LEVEL DIAGRAMS; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION; HOLE INJECTION BARRIERS; IN-SITU; INJECTION BARRIERS; LEVEL SHIFT; MOO3; PENTACENE THIN-FILM TRANSISTORS; PENTACENES; PHOTOEMISSION SPECTROSCOPY; SECONDARY ELECTRONS; XPS;

ALUMINUM; BINDING ENERGY; CHEMICAL BONDS; ELECTRON INJECTION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; HOLE TRAPS; MOLECULAR ORBITALS; POWER SUPPLY CIRCUITS; THIN FILM TRANSISTORS; UNINTERRUPTIBLE POWER SYSTEMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 71949110027     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.08.041     Document Type: Article

References (23)

1. Tang C.W., and Slyke S.V. Appl. Phys. Lett. 51 (1987) 913
2. Peumans P., Yakimov A., and Forrest S.R. J. Appl. Phys. 93 (2003) 3693
3. Zaumseil J., and Sirringhaus H. Chem. Rev. 107 (2007) 1296
4. Shaw J.M., and Seider P.F. IBM J. Res. Dev. 45 (2001) 3
5. Dimitrakopoulos C.D., and Mascaro D.J. IBM J. Res. Dev. 45 (2001) 11
6. Dimitrakopoulos C.D., and Malenfant P.R.L. Adv. Mater. (Weinheim, Ger.) 14 (2002) 2
7. Lee H., Cho S.W., Han K., Jeon P.E., Whang C.-N., Jeong K., Cho K., and Yi Y. Appl. Phys. Lett. 93 (2008) 043308
8. Chu C.W., Li S.H., Chen C.W., Shrotriya V., and Yang Y. Appl. Phys. Lett. 87 (2005) 193508
9. Kumaki D., Umeda T., and Tokito S. Appl. Phys. Lett. 92 (2008) 013301
10. Yi Y., Jeon P.E., Lee H., Han K., Kim H.S., Jeong K., and Cho S.W. J. Chem. Phys. 130 (2009) 094704
11. Tokarz-Sobieraj R., Hermann K., Witko M., Blume A., Mestl G., and Schlogl R. Surf. Sci. 489 (2001) 107
12. Ishii H., Sugiyama K., Ito E., and Seki K. Adv. Mater. (Weinheim, Ger.) 11 (1999) 605
13. Matsushinma T., Kinoshita Y., and Murata H. Appl. Phys. Lett. 91 (2007) 253504
14. Schlaf R., Parkinson B.A., Lee P.A., Nebesny K.W., and Armstrong N.R. J. Phys. Chem. B 103 (1999) 2984
15. Moudler J.F., Sticke W.F., Sobol P.E., and Bomben K.D. Handbook of X-ray Photoemission Spectroscopy (1992), PerkinElmer, Minnesota
16. d Moraes M.A.B., Trasferetti B.C., Rouxinol F.P., Landers R., Durrant S.F., Scarminio J., and Urbano A. Chem. Mater. 16 (2001) 513
17. Schlaf R., Schroeder P.G., Nelson M.W., Parkinson B.A., Merritt C.D., Crisafulli L.A., Murata H., and Kafafi Z.H. Surf. Sci. 450 (2000) 142
18. Watkins N.J., and Gao Y. J. Appl. Phys. 94 (2003) 1289
19. Kang S.J., Yi Y., Kim C.Y., Cho S.W., Noh M., Jeong K., and Whang C.N. Synth. Met. 156 (2006) 32
20. Cho S.W., Jeong J.G., Park S.H., Cho M.-H., Jeong K., Whang C.-N., and Yi Y. Appl. Phys. Lett. 92 (2008) 213302
21. Sze S.M. Semiconductor Devices: Physics and Technology. 2nd ed. (2002), Wiley, New York
22. Duhm S., Heimel G., Salzmann I., Glowatzki H., Johnson R.L., Vollmer A., Rabe J.P., and Koch N. Nat. Mater. 7 (2008) 326
23. Magulick J., Beerbom M.M., and Schlaf R. J. Phys. Chem. B 110 (2006) 15973