A biochemical translinear principle with weak inversion ISFETs

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 52, Issue 12, 2005, Pages 2614-2619

  Shepherd, Leila M ^a   Toumazou, Chris ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Chemically sensitive ion sensitive field effect transistor (ChemFET); CMOS; ISFET; Low power; pH; Weak inversion

Indexed keywords

BIOCHEMISTRY; CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; PH SENSORS; SIGNAL PROCESSING; TRANSCONDUCTANCE; VLSI CIRCUITS;

DRAIN CURRENT; HYDROGEN ION CONCENTRATION; TRANSLINEAR CIRCUITS; WEAK INVERSION;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 29344458553     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2005.857919     Document Type: Article

References (19)

1. P. Bergveld, "Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years," Sens. Actuators B: Chemical, vol. 88, no. 1, pp. 1-20, 2003.
2. M. J. Schöning and A. Poghossian, "Recent advances in biologically sensitive field-effect transistors (BioFETs)," Analyst, vol. 127, no. 9, pp. 1137-1151, 2002.
3. L. Bousse, J. Shott, and J. D. Meindl, "A process for the combined fabrication of ion sensors and CMOS circuits," IEEE Trans. Electron Devices, vol. 9, no. 1, pp. 44-46, Jan. 1988.
4. H. S. Wong and M. H. White, "A CMOS-integrated ISFET-operational amplifier chemical sensor employing differential sensing," IEEE Trans. Electron Devices, vol. 36, no. 3, pp. 479-487, Mar. 1989.
5. Y. L. Chin, J. C. Chou, T. P. Sun, W. Y. Chung, and S. K. Hsiung, "A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process," Sens. Actuators B: Chemical, vol. 76, no. 1-3, pp. 582-593, 2001.
6. J. Bausells, J. Carrabina, A. Errachid, and A. Merlos, "Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology," Sens. Actuators B: Chemical, vol. 57, no. 1-3, pp. 56-62, 1999.
7. C. G. Jakobson, U. Dinnar, M. Feinsod, and Y. Nemirovsky, "Ion-sensitive field-effect transistors in standard CMOS fabricated by post pro-cessing," IEEE Sensors J., vol. 2, no. 4, pp. 279-287, Mar. 2002.
8. P. A. Hammond, D. Ali, and D. R. S. Cumming, "Design of a singlechip pH sensor using a conventional 0.6-mu m CMOS process," IEEE Sensors J., vol. 4, no. 6, pp. 706-712, 2004.
9. H. Abe, M. Esashi, and T. Matsuo, "ISFETs using inorganic gate thin films," IEEE Trans. Electron Devices, vol. ED-26, no. 12, pp. 1939-1944, Dec. 1979.
10. P. Bergveld, "The operation of an ISFET as an electronic device," Sens. Actuators, vol. 1, no. 1, pp. 17-29, 1981.
11. A. Sibbald, "A chemical-sensitive integrated-circuit The operational transducer," Sens. Actuators, vol. 7, no. 1, pp. 23-38, 1985.
12. A. Errachid, J. Bausells, and N. Jaffrezic-Renault, "A simple REFET for pH detection in differential mode," Sens. Actuators B: Chemical, vol. 60, no. 1, pp. 43-48, 1999.
13. L. J. Bousse, N. F. de Rooij, and P. Bergveld, "Operation of chemically sensitive field effect sensors as a function of the properties of the insu-lator/electrolyte interface," IEEE Trans. Electron Devices, vol. 30, pp. 1263-1270, 1983.
14. G. Massobrio, M. Grattarola, G. Mattioli, and J. Mattioli, "ISFET-based biosensor modeling with SPICE," Sens. Actuators B: Chemical, vol. 1, no. 1-6, pp. 401-407, 1990.
15. R.E.G. van Hal, J. C. T. Eijkel, and P. Bergveld, "A novel description of ISFET sensitivity with the buffer capacity and double-layer capacitance as key parameters," Sens. Actuators B: Chemical, vol. 24, no. 1-3, pp. 201-205, 1995.
16. S. Martinoia and G. Massobrio, "A behavioral macromodel of the ISFET in SPICE," Sens. Actuators B: Chemical, vol. 62, no 3, pp. 182-189, 2000.
17. B. Gilbert, "Current-mode circuits from a translinear viewpoint: A tutorial," in Analogue IC Design: The Current-Mode Approach. ser. IEE circuits and systems series. 2, C. Toumazou, F. J. Lidgey, and D. G. Haigh, Eds. London, U.K.: Peter Peregrinus, 1990, ch. 2, pp. 11-91.
18. A.G. Andreou and K. A. Boahen, "Translinear circuits in subthreshold MOS," Anal. Integr. Circuits Signal Process., vol. 9, no. 2, pp. 141-166, 1996.
19. T. Serrano-Gotarredona, B. Linares-Barranco, and A. G. Andreou, "A general translinear principle for subthreshold MOS transistors," IEEE Trans. Circuits Syst. I, Fundam. Theory Appl., vol. 46, no. 5, pp. 607-616, May 1999.