Preparation and characterization of the amorphous tungsten cone field emitter arrays by Ar + etching

Applied Surface Science

Volumn 256, Issue 3, 2009, Pages 693-697

  Xie, Fang Yan ^a   Gong, Li ^a   Liu, Xiao ^a   Chen, Jian ^a   Xie, Wei Guang ^a   Zhang, Wei Hong ^a   Chen, Shang Hui ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

Amorphous tungsten; Ar ion etching; Tungsten oxide nanowire; X ray photoelectron spectrum

Indexed keywords

AMORPHOUS FILMS; ASPECT RATIO; ETCHING; NANOWIRES; PHOTOELECTRONS; PHOTONS; TUNGSTEN COMPOUNDS;

ETCHING PROCESS; FIELD EMISSION PROPERTY; FIELD EMITTER ARRAYS; HIGH ASPECT RATIO; ION ETCHING; METALLIC TUNGSTEN; TUNGSTEN OXIDE NANOWIRES; X RAY PHOTOELECTRON SPECTRA;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 71749119711     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.08.044     Document Type: Article

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