Fluorine doped indium oxide films for silicon solar cells

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1345-1349

  Untila, G G ^a   Kost, T N ^a   Chebotareva, A B ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Heterojunction; Indium Fluorine Oxide; Pyrolysis; Silicon; Solar cells; TCO

Indexed keywords

CARRIER GAS; DEPOSITION TEMPERATURES; FILM-FORMING; FLUORINE-DOPED; INDIUM OXIDE FILMS; OPTIMAL CONDITIONS; PHOTO-VOLTAGE; SI SOLAR CELLS; TCO;

ARGON; FLUORINE; INDIUM; METHANOL; OXIDE FILMS; PYROLYSIS; SILICON; SILICON SOLAR CELLS; SOLAR CELLS;

HETEROJUNCTIONS;

EID: 71749083219     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.152     Document Type: Article

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