Stepped-etching for preserving critical dimensions in through-wafer deep reactive ion etching of thick silicon

TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Volumn , Issue , 2009, Pages 1110-1113

  Alper, Said Emre ^a   Aydemir, A ^a   Akin, T ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Deep reactive ion etching (DRIE); DRIE heating effect; High aspect ratio micromachining

Indexed keywords

CD VARIATION; CLASSICAL METHODS; COMB FINGERS; CRITICAL DIMENSION; DEEP REACTIVE ION ETCHING; EXPERIMENTAL INVESTIGATIONS; GLASS SUBSTRATES; HEATING EFFECT; HIGH-ASPECT RATIO; HIGH-ASPECT RATIO MICROMACHINING; LOCAL HEATING; SIDEWALL PASSIVATION; SILICON MICROSTRUCTURES;

ACTUATORS; ASPECT RATIO; COMPOSITE MICROMECHANICS; DATA STORAGE EQUIPMENT; HEATING; IONS; MICROMACHINING; MICROSYSTEMS; PASSIVATION; PIEZOELECTRIC TRANSDUCERS; PRESSURE DROP; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOLID-STATE SENSORS;

REACTIVE ION ETCHING;

EID: 71449085964     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2009.5285924     Document Type: Conference Paper

References (6)

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