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Journal of Materials Science: Materials in Electronics

Volumn 20, Issue SUPPL. 1, 2009, Pages

Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate

(5) Tanaka, Tooru a Saito, Katsuhiko a Nishio, Mitsuhiro a Guo, Qixin a Ogawa, Hiroshi a

a SAGA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BRIDGMAN; METAL-ORGANIC VAPOR PHASE EPITAXY; P-N JUNCTION; ROOM TEMPERATURE;

ALUMINUM; CRYSTAL GROWTH; DIFFUSION; EPILAYERS; EPITAXIAL LAYERS; FABRICATION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL ENGINEERING; PHYSICAL OPTICS; SUBSTRATES; THERMAL DIFFUSION IN LIQUIDS; WATER ANALYSIS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 71149110680 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9691-4 Document Type: Conference Paper

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.