Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris- dimethylaminophosphorus

Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 1172-1175

  Hayashida, Kazuki ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Guo, Qixin ^a   Tanikawa, Tuyoshi ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AROMATIC COMPOUNDS; ATMOSPHERIC PRESSURE; DOPING (ADDITIVES); EPITAXIAL GROWTH; PHOSPHORUS; PHOTOLUMINESCENCE; SUBSTRATES; TEMPERATURE MEASUREMENT; ZINC ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; ZINC COMPOUNDS;

ELECTRICAL PROPERTIES; PHOSPHORUS-DOPED ZNTE LAYERS; SUBSTRATE TEMPERATURES; TRISDIMETHYLAMINOPHOSPHORUS;

METALLORGANIC VAPOR PHASE EPITAXY; ELECTRIC PROPERTIES;

73.61.GA; 78.55.ET; 81.05.DZ; 81.15.KK; DONOR-ACCEPTOR PAIRS; FREE-TO-BOUND TRANSITIONS; PHOTOLUMINESCENCE PROPERTIES; SUBSTRATE TEMPERATURE;

EID: 33646200271     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564668     Document Type: Conference Paper

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