Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE

Physica Status Solidi (B) Basic Research

Volumn 244, Issue 5, 2007, Pages 1634-1638

  Saito, Katsuhiko ^a   Fujimoto, Kenji ^a   Yamaguchi, Kouji ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34249047265     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200675120     Document Type: Article

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