Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 437-440

  Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Hayashida, Kazuki ^a   Fujimoto, Kenji ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

A1. Electrical property; A1. Photoluminescence; A3. Metalorganic vapor phase epitaxy; B1. TDMAP transport rate; B1. ZnTe

Indexed keywords

ATMOSPHERIC PRESSURE; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

BAND-EDGE EMISSIONS; BUTYLPHOSPHINE; DOPANT TRANSPORT RATE; EPITAXIAL LAYERS;

SEMICONDUCTOR GROWTH;

EID: 33846462097     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.052     Document Type: Article

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