Improved field-induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 7-8, 2009, Pages 248-250

  Hao, Xihong ^a,b   Zhai, Jiwei ^a   Yang, Jichun ^b   Ren, Huiping ^b   Song, Xiwen ^b  

^a TONGJI UNIVERSITY   (China)

^b INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROELECTRICS; ELECTRIC-FIELD-INDUCED STRAIN; FATIGUE BEHAVIOR; FATIGUE ENDURANCES; FERROELECTRIC SWITCHING; FIELD-INDUCED STRAIN; MODIFIED SOL-GEL PROCESS; ORIENTATION CONTROL; ORIENTED FILMS; PLATINUM ELECTRODES; PREFERRED ORIENTATIONS; SILICON SUBSTRATES;

ANTIFERROELECTRICITY; ELECTRODES; LEAD; PLATINUM; SOL-GEL PROCESS; STRAIN; THICK FILMS; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 71149085145     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903174     Document Type: Article

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