Reliability behavior of TaAIOx metal-insulator-metal capacitors

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2009, Pages 803-806

  Hota, M K ^a   Mahata, C ^a   Bera, M K ^c   Mallik, S ^a   Majhi, B ^a   Das, T ^a   Sarkar, C K ^b   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b JADAVPUR UNIVERSITY   (India)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT; CONSTANT VOLTAGE; COSPUTTERING; DEGRADATION KINETICS; DIELECTRIC BREAKDOWN VOLTAGES; HIGH-CAPACITANCE DENSITY; HIGH-K DIELECTRIC; LOW SUBSTRATE TEMPERATURE; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; RELIABILITY BEHAVIOR; RELIABILITY CHARACTERISTICS; VOLTAGE COEFFICIENTS OF CAPACITANCES;

CAPACITANCE; CAPACITORS; DEGRADATION; ELECTRIC BREAKDOWN; INTEGRATED CIRCUITS; METAL INSULATOR BOUNDARIES; MIM DEVICES; QUALITY ASSURANCE; SAFETY FACTOR;

FAILURE ANALYSIS;

EID: 71049169335     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2009.5232720     Document Type: Conference Paper

References (7)

1. T. Remmel, R. Ramprasad, and J. Walls, "Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors, " in Proc. Int. ReI. Phys. Symp., 2003, pp. 277-281.
2. K. Takeda, R. Yamada, T. Imai, T. Fujiwara, T. Hashimoto, and T. Ando, "Characteristic Instabilities in HfAIOx Metal-Insulator-Metal Capacitors Under Constant-Voltage Stress, " IEEE Electron Device Lett., vol. 55, no. 6, pp. 1359-1365, 2008.
3. R. S. Scott and D. J. Durnin, "The transient nature of excess low-level leakage currents in thin oxides, " J. Electrochem. Soc., vol. 142, pp. 586-590, 1995.
4. K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, A. Chin, and H. L. Hwang, "Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog SrTi03 Metal Insulator-Metal Capacitors, " IEEE Electron Device Lett., Vol. 28, NO.8, pp.694-696, 2007. (Pubitemid 47242026)
5. C. C. Hung, A. S. Oates, H. C. Lin, P. Chang, J.L. Wang, C.C. Huang, and Y.W. Yau, "New Understanding of Metal-Insulator-Metal (MIM) Capacitor Degradation Behavior, " IEEE Trans. Device Mater. Reliab., vol. 7, no. 3, pp. 462-467, 2007.
6. R. H. Walden, "A method for the determination of high-field conduction laws in insulating films in the presence of charge trapping, " J. Appl. Phys., vol. 43, no. 3, pp. 1178-1186, 1972.
7. G. Kamoulakos and C. Kelaidis, "Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm), " J. Appl. Phys., vol. 86, no. 9, pp. 5131-5140, 1999.