Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 277-281

  Remmel, Thomas ^a   Ramprasad, Rampi ^a   Walls, James ^a  

^a MOTOROLA INC   (United States)

Author keywords

Dynamic stress; Leakage; MIM capacitor; Reliability; SILC; Tantalum oxide

Indexed keywords

CAPACITORS; LEAKAGE (FLUID); MIM DEVICES; RELIABILITY; RELIABILITY ANALYSIS; TANTALUM;

DYNAMIC STRESS; LEAKAGE BEHAVIORS; MIM CAPACITORS; OXIDE DIELECTRIC; PROCESS CONDITION; RELIABILITY ASSESSMENTS; SILC; WIRELESS INTEGRATED CIRCUITS;

TANTALUM OXIDES;

EID: 84955270354     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197757     Document Type: Conference Paper

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