Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm)

Journal of Applied Physics

Volumn 86, Issue 9, 1999, Pages 5131-5140

  Kamoulakos, George ^a   Kelaidis, Christine ^a   Papadas, Constantin ^b,c   Vincent, Emmanuel ^c   Bruyere, Sylvie ^c   Ghibaudo, Gerard ^d   Pananakakis, Georges ^d   Mortini, Patrick ^c   Ghidini, Gabriella ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b Integrated Systems Development   (Greece)

^c STMICROELECTRONICS   (Italy)

^d Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041169488     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371489     Document Type: Article

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