In situ monitoring of ZnO formation by photoemission spectroscopy

Applied Surface Science

Volumn 256, Issue 4, 2009, Pages 980-983

  Noothongkaew, Suttinart ^a,b   Supruangnet, Ratchadaporn ^a,b   Meevasana, Worawat ^a,c   Nakajima, Hideki ^a,d   Limpijumnong, Sukit ^a,b   Songsiriritthigul, Prayoon ^a,b,d  

^a SYNCHROTRON LIGHT RESEARCH INSTITUTE   (Thailand)

^b SURANAREE UNIVERSITY OF TECHNOLOGY   (Thailand)

^c STANFORD UNIVERSITY   (United States)

^d Thailand Ministry of Science and Technology   (Thailand)

Author keywords

Oxidation of Zn; Photoemission spectroscopy; Synchrotron radiation; ZnO

Indexed keywords

II-VI SEMICONDUCTORS; OXIDATION; OXYGEN; SYNCHROTRON RADIATION; SYNCHROTRONS; ZINC OXIDE;

CRITICAL THICKNESS; IN- SITU MONITORING; IN-SITU SYNCHROTRONS; OXIDATION OF ZN; OXIDATION PROCESS; OXIDATION RATES; OXYGEN EXPOSURE;

PHOTOELECTRON SPECTROSCOPY;

EID: 70749119363     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.05.135     Document Type: Article

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