-
1
-
-
29044446409
-
A noise cancellation technique in active RF-CMOS mixers
-
()
-
Darabi, H., and Chiu, J.: ' A noise cancellation technique in active RF-CMOS mixers ', IEEE JSSC, 2005, 40, (12), p. 2628-2632
-
(2005)
IEEE JSSC
, vol.40
, Issue.12
, pp. 2628-2632
-
-
Darabi, H.1
Chiu, J.2
-
2
-
-
58049100430
-
Reduction of VCO phase noise through forward substrate biasing of switched MOSFETs
-
September
-
Šiprak, D., Tiebout, M., and Baumgartner, P.: ' Reduction of VCO phase noise through forward substrate biasing of switched MOSFETs ', Proc. ESSCIRC, September, 2008, p. 326-329
-
(2008)
Proc. ESSCIRC
, pp. 326-329
-
-
Šiprak, D.1
Tiebout, M.2
Baumgartner, P.3
-
3
-
-
34249778119
-
A complementary switched MOSFET architecture for the 1/f noise reduction in linear analog CMOS ICs
-
()
-
Koh, J., Schmitt-Landsiedel, D., Thewes, R., and Brederlow, R.: ' A complementary switched MOSFET architecture for the 1/f noise reduction in linear analog CMOS ICs ', IEEE JSSC, 2007, 42, (6), p. 1352-1361
-
(2007)
IEEE JSSC
, vol.42
, Issue.6
, pp. 1352-1361
-
-
Koh, J.1
Schmitt-Landsiedel, D.2
Thewes, R.3
Brederlow, R.4
-
4
-
-
1242265549
-
A 24-GHz CMOS front-end
-
()
-
Guan, X., and Hajimiri, A.: ' A 24-GHz CMOS front-end ', IEEE JSSC, 2004, 39, (2), p. 368-373
-
(2004)
IEEE JSSC
, vol.39
, Issue.2
, pp. 368-373
-
-
Guan, X.1
Hajimiri, A.2
-
5
-
-
44049098514
-
A 24-GHz CMOS passive subharmonic mixer/downconverter for zero-IF applications
-
()
-
Kodkani, R.M., and Larson, L.E.: ' A 24-GHz CMOS passive subharmonic mixer/downconverter for zero-IF applications ', IEEE Trans. Microw. Theor. Tech., 2008, 56, (5), p. 1247-1256
-
(2008)
IEEE Trans. Microw. Theor. Tech.
, vol.56
, Issue.5
, pp. 1247-1256
-
-
Kodkani, R.M.1
Larson, L.E.2
-
6
-
-
0035695307
-
RF mixers using standard digital CMOS 0.35 um process
-
May
-
Geffroy, V., De Astis, G., and Bergeault, E.: ' RF mixers using standard digital CMOS 0.35 um process ', MTT Symp., May, 2001, p. 83-86
-
(2001)
MTT Symp.
, pp. 83-86
-
-
Geffroy, V.1
De Astis, G.2
Bergeault, E.3
-
7
-
-
49749124989
-
Comparison of active and passive mixers
-
August
-
Voltti, M., Koivi, T., and Tiiliharju, E.: ' Comparison of active and passive mixers ', Proc. ECCTD, August, 2007, p. 890-893
-
(2007)
Proc. ECCTD
, pp. 890-893
-
-
Voltti, M.1
Koivi, T.2
Tiiliharju, E.3
-
8
-
-
51849122930
-
A low power 24 GHz LNA in 0.13m CMOS
-
Tel-Aviv, May
-
Issakov, V., Tiebout, M., Cao, Y., Thiede, A., and Simburger, W.: ' A low power 24 GHz LNA in 0.13m CMOS ', Proc. COMCAS, Tel-Aviv, May, 2008, p. 1-10
-
(2008)
Proc. COMCAS
, pp. 1-10
-
-
Issakov, V.1
Tiebout, M.2
Cao, Y.3
Thiede, A.4
Simburger, W.5
-
9
-
-
66649108024
-
ESD Concept for high-frequency circuits
-
September
-
Issakov, V., Johnsson, D., Cao, Y., Tiebout, M., Mayerhofer, M., Simburger, W., and Maurer, L.: ' ESD Concept for high-frequency circuits ', EOSESD Symp., September, 2008, p. 221-227
-
(2008)
EOSESD Symp.
, pp. 221-227
-
-
Issakov, V.1
Johnsson, D.2
Cao, Y.3
Tiebout, M.4
Mayerhofer, M.5
Simburger, W.6
Maurer, L.7
-
10
-
-
70749116783
-
Comparison of 24 GHz low-noise mixers in CMOS and SiGe:C technologies
-
Rome, Italy, September
-
Issakov, V., Knapp, H., Tiebout, M., Thiede, A., Simburger, W., and Maurer, L.: ' Comparison of 24 GHz low-noise mixers in CMOS and SiGe:C technologies ', Proc. EuMIC, Rome, Italy, September, 2009, p. 184-187
-
(2009)
Proc. EuMIC
, pp. 184-187
-
-
Issakov, V.1
Knapp, H.2
Tiebout, M.3
Thiede, A.4
Simburger, W.5
Maurer, L.6
-
11
-
-
60549108810
-
W-band active down-conversion mixer in bulk CMOS
-
1531-1309
-
Zhang, N., Xu, H., Wu, H.-T., and O, K.-K.: ' W-band active down-conversion mixer in bulk CMOS ', IEEE Microw. Wirel. Compon. Lett., 2009, 19, (2), p. 98-100 1531-1309
-
(2009)
IEEE Microw. Wirel. Compon. Lett.
, vol.19
, Issue.2
, pp. 98-100
-
-
Zhang, N.1
Xu, H.2
Wu, H.-T.3
O, K.-K.4
-
12
-
-
67650114456
-
Wideband resistive ring mixer for automotive and industrial applications in 0.13m CMOS
-
March
-
Issakov, V., Thiede, A., Verweyen, L., and Maurer, L.: ' Wideband resistive ring mixer for automotive and industrial applications in 0.13m CMOS ', Proc. GeMIC, March, 2009, p. 1-4
-
(2009)
Proc. GeMIC
, pp. 1-4
-
-
Issakov, V.1
Thiede, A.2
Verweyen, L.3
Maurer, L.4
-
13
-
-
24344494932
-
26.5-30-GHz Resistive Mixer in 90-nm VLSI SOI CMOS technology with high linearity for WLAN
-
Ellinger, F.: ' 26.5-30-GHz Resistive Mixer in 90-nm VLSI SOI CMOS technology with high linearity for WLAN ', IEEE Trans. Microw. Theor. Tech., 2005, 53, (8), p. 2559-2565
-
(2005)
IEEE Trans. Microw. Theor. Tech.
, vol.53
, Issue.8
, pp. 2559-2565
-
-
Ellinger, F.1
-
14
-
-
0034790426
-
A 0.13m CMOS platform with Cu/low-k interconnect for system on chip applications
-
et al. June
-
Schiml, T., Biesemans, S., and Brase, G.: et al. ' A 0.13m CMOS platform with Cu/low-k interconnect for system on chip applications ', IEEE Symp. VLSI Technology Dig. Tech. Papers, June, 2001, p. 101-102
-
(2001)
IEEE Symp. VLSI Technology Dig. Tech. Papers
, pp. 101-102
-
-
Schiml, T.1
Biesemans, S.2
Brase, G.3
-
15
-
-
34247632708
-
A low-noise amplifier at 77 GHz in SiGe:C bipolar technology
-
November
-
Dehlink, B., Wohlmuth, H.-D., Aufinger, K., Meister, T.F., Bock, J., and Scholtz, A.L.: ' A low-noise amplifier at 77 GHz in SiGe:C bipolar technology ', CSICS Symp., November, 2005, p. 287-290
-
(2005)
CSICS Symp.
, pp. 287-290
-
-
Dehlink, B.1
Wohlmuth, H.-D.2
Aufinger, K.3
Meister, T.F.4
Bock, J.5
Scholtz, A.L.6
-
16
-
-
0025398785
-
A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
-
0018-9383
-
Hung, K.K., Ko, P.K., Hu, C., and Cheng, Y.C.: ' A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors ', IEEE Trans. Electron. Dev., 1990, 37, (3), p. 654-665 0018-9383
-
(1990)
IEEE Trans. Electron. Dev.
, vol.37
, Issue.3
, pp. 654-665
-
-
Hung, K.K.1
Ko, P.K.2
Hu, C.3
Cheng, Y.C.4
-
19
-
-
0004468181
-
Temperature dependence of MOS transistor characteristics below saturation
-
0018-9383
-
Vadasz, L., and Grove, A.S.: ' Temperature dependence of MOS transistor characteristics below saturation ', IEEE Trans. Electron Devices, 1996, 13, (12), p. 863-866 0018-9383
-
(1996)
IEEE Trans. Electron Devices
, vol.13
, Issue.12
, pp. 863-866
-
-
Vadasz, L.1
Grove, A.S.2
-
20
-
-
0003476558
-
-
(IEEE Press)
-
Baker, R.J., Li, H.W., and Boyce, D.E.: ' CMOS circuit design, layout, and simulation ', (IEEE Press, 1998), p. 175-178
-
(1998)
CMOS Circuit Design, Layout, and Simulation
, pp. 175-178
-
-
Baker, R.J.1
Li, H.W.2
Boyce, D.E.3
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