Characterization of LWIR diodes on InAs/GaSb Type-II superlattice material

Infrared Physics and Technology

Volumn 52, Issue 6, 2009, Pages 304-309

  Rhiger, David R ^a   Kvaas, Robert E ^a   Harris, Sean F ^a   Hill, Cory J ^b  

^a RAYTHEON COMPANY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carrier lifetime; Infrared detectors; Superlattices; Surface passivation

Indexed keywords

ARSENIC PRECIPITATES; ATOMIC SCALE; COLLABORATIVE EFFORTS; CONFORMAL COATINGS; CRITICAL INTERFACES; CURRENT VOLTAGE CURVE; CUTOFF WAVELENGTHS; DIFFERENTIAL ETCHING; DIFFUSION PROCESS; GENERATION-RECOMBINATION; HGCDTE DIODES; INAS/GASB; INAS/GASB SUPERLATTICES; JET PROPULSION LABORATORY; LONG-WAVELENGTH INFRARED; LWIR HGCDTE; MATERIAL CHARACTERISTICS; MESA SIDEWALL; MINORITY CARRIER LIFETIMES; RAYTHEON VISION SYSTEMS; SILICON DIOXIDE PASSIVATION; STRAINED LAYERS; SUPERLATTICE PERIODICITY; SURFACE PASSIVATION; TYPE-II SUPERLATTICES; WAFER PROCESSING;

ARSENIC; CARRIER LIFETIME; CURVE FITTING; DETECTORS; DISTRIBUTED COMPUTER SYSTEMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; INFRARED DETECTORS; INTERNAL COMBUSTION ENGINES; MERCURY COMPOUNDS; PASSIVATION; SILICA; SILICON WAFERS; SUPERLATTICES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 70649114675     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2009.05.009     Document Type: Article

References (13)

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