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Volumn 93, Issue 9, 2008, Pages

Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; MICROSCOPIC EXAMINATION; OPTOELECTRONIC DEVICES;

EID: 51349088134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2977589     Document Type: Article
Times cited : (28)

References (10)
  • 1
    • 36549095407 scopus 로고
    • 0021-8979 10.1063/1.339468.
    • D. L. Smith and C. Mailhiot, J. Appl. Phys. 0021-8979 10.1063/1.339468 62, 2545 (1987).
    • (1987) J. Appl. Phys. , vol.62 , pp. 2545
    • Smith, D.L.1    Mailhiot, C.2
  • 3
    • 26444497943 scopus 로고    scopus 로고
    • 0277-786X 10.1117/12.606621.
    • G. J. Brown, Proc. SPIE 0277-786X 10.1117/12.606621 5783, 65 (2005).
    • (2005) Proc. SPIE , vol.5783 , pp. 65
    • Brown, G.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.