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Volumn 93, Issue 9, 2008, Pages
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Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall
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Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC COMPOUNDS;
MICROSCOPIC EXAMINATION;
OPTOELECTRONIC DEVICES;
MESA SIDEWALLS;
PASSIVATION LAYERS;
SURFACE LEAKAGE CURRENTS;
PASSIVATION;
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EID: 51349088134
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2977589 Document Type: Article |
Times cited : (28)
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References (10)
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