Deterioration and recovery in the resistivity of Al-doped ZnO films prepared by the plasma sputtering

Vacuum

Volumn 84, Issue 5, 2009, Pages 625-628

  Kono, Akihiko ^a   Shoji, Fumiya ^a  

^a KYUSHU KYORITSU UNIVERSITY   (Japan)

Author keywords

Aluminum doped zinc oxide (AZO) film; Sputtering; Transparent conducting oxide (TCO) film

Indexed keywords

AL-DOPED ZNO; ALUMINUM-DOPED ZINC OXIDE; ANNEALING EXPERIMENTS; AZO FILMS; CARRIER DENSITY; CATHODE PLASMAS; ELECTRICAL PROPERTY; FILM SPUTTERING; GLASS SUBSTRATES; NITROGEN GAS; PARTICULAR CONDITION; PLASMA EXCITATION; PLASMA SPUTTERING; POLYCRYSTALLINE; TARGET VOLTAGE; TRANSPARENT CONDUCTING OXIDE FILMS;

ALUMINUM; ATMOSPHERIC PRESSURE; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; GRAIN BOUNDARIES; HALL MOBILITY; OPTICAL FILMS; OXYGEN; OXYGEN VACANCIES; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 70649099221     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.06.057     Document Type: Article

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