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Volumn 100, Issue 11, 2006, Pages

Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; HALL EFFECT; INDIUM COMPOUNDS; OXYGEN; SEMICONDUCTOR DOPING; SUBSTRATES; TIN;

EID: 33845774878     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2372571     Document Type: Article
Times cited : (43)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.