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Volumn 100, Issue 11, 2006, Pages
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Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON MOBILITY;
HALL EFFECT;
INDIUM COMPOUNDS;
OXYGEN;
SEMICONDUCTOR DOPING;
SUBSTRATES;
TIN;
ELECTRON CARRIER;
GLASS SUBSTRATES;
INDIUM OXIDE;
PLASMA SPUTTERING;
FILM GROWTH;
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EID: 33845774878
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2372571 Document Type: Article |
Times cited : (43)
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References (15)
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