메뉴 건너뛰기




Volumn 13, Issue 1, 2009, Pages

Electrically benign dry-etching method for rutile TiO2 thin-film capacitors with Ru electrodes

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; CAPACITOR STRUCTURES; CLEANING SOLUTION; DRY-ETCH; ELECTRICAL PERFORMANCE; ETCHING GAS; RUTILE TIO; THIN-FILM CAPACITORS; TIO;

EID: 70450207627     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3247971     Document Type: Article
Times cited : (4)

References (11)
  • 11
    • 34547566586 scopus 로고    scopus 로고
    • 2 films grown by atomic layer deposition for memory capacitor applications
    • DOI 10.1063/1.2757008
    • S. K. Kim, S. Y. Lee, M. Seo, G. -J. Choi, and C. S. Hwang, J. Appl. Phys. 0021-8979, 102, 024109 (2007). 10.1063/1.2757008 (Pubitemid 47191992)
    • (2007) Journal of Applied Physics , vol.102 , Issue.2 , pp. 024109
    • Kim, S.K.1    Lee, S.Y.2    Seo, M.3    Choi, G.-J.4    Hwang, C.S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.