Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy

Semiconductor Science and Technology

Volumn 24, Issue 11, 2009, Pages

  Alarcon Llado E ^a   Ibanez J ^a   Cusco R ^a   Artus L ^a   Novikov, S V ^b   Foxon, C T ^b  

^a INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BUFFER; CRYSTAL QUALITIES; GAMNN EPILAYERS; GAN THIN FILMS; GROWTH YIELD; HEXAGONAL PHASE; MN-DOPED; MULTIPHONONS; NONRESONANT; PL EMISSION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RAMAN FEATURE; RICH CONDITIONS; UV SPECTRUM; VISIBLE AND ULTRAVIOLET;

EPILAYERS; EPITAXIAL GROWTH; EXPERIMENTS; GALLIUM NITRIDE; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SUPERCONDUCTING FILMS; ULTRAVIOLET SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 70450191674     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/11/115019     Document Type: Article

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