Analysis of radiation-hardening techniques for 6T SRAMs with structured layouts

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 791-795

  Torrens, Gabriel ^a   Alorda, Bartomeu ^a   Bota, Sebastià ^a   Segura, Jaume ^a  

^a UNIVERSITAT DE LES ILLES BALEARS   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

6T-SRAM; CELL LAYOUT; CROSS-COUPLED; NMOS TRANSISTORS; SRAM CELL;

HARDENING; RADIATION HARDENING;

STATIC RANDOM ACCESS STORAGE;

EID: 70449100697     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173351     Document Type: Conference Paper

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