Changes in the electrical transport of ZnO under visible light

Solid State Communications

Volumn 150, Issue 1-2, 2010, Pages 22-26

  Dusari, S ^a   Barzola Quiquia, J ^a   Esquinazi, P ^a   Heluani, S P ^b  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b UNIVERSIDAD NACIONAL DE TUCUMÁN   (Argentina)

Author keywords

A. Semiconductors; D. Photoconductivity

Indexed keywords

A. SEMICONDUCTORS; COMPLEX IMPEDANCE SPECTROSCOPY; D. PHOTOCONDUCTIVITY; ELECTRICAL TRANSPORT; FIXED TIME; FREQUENCY RANGES; IMPEDANCE DATA; MEASURED IMPEDANCE; OR COVERINGS; PURE ZNO; ROOM TEMPERATURE; SINGLE RELAXATION; VISIBLE LIGHT; ZNO; ZNO CRYSTALS;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; PHOTOCONDUCTIVITY; RELAXATION PROCESSES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS; THIN FILM DEVICES; THIN FILMS;

ZINC OXIDE;

EID: 70449084786     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.10.015     Document Type: Article

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